Semiconductor structure having island forming grooves

Details Semiconductor structure having island forming grooves Semiconductor structure having island forming grooves

1995-06-02

1996-10-15

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257508, 257520, 257768, 257774, H01L 21782, H01L 2712, H01L 2906

Patent

active

055656978

ABSTRACT:
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.

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