Semiconductor structure having alignment marks with shallow...

Details Semiconductor structure having alignment marks with shallow... Semiconductor structure having alignment marks with shallow...

2007-03-20

2007-03-20

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C257SE23179

Reexamination Certificate

active

10848638

ABSTRACT:
A semiconductor structure including a semiconductor substrate, an isolation trench in the semiconductor substrate, and an alignment trench in the semiconductor substrate is disclosed. The structure also includes a dielectric layer and a metallic layer. The dielectric layer is on the semiconductor substrate and in both the isolation trench and the alignment trench. The dielectric layer fills the isolation trench and does not fill the alignment trench. The metallic layer is on the dielectric layer.

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