Semiconductor structure having a titanium barrier layer

Details Semiconductor structure having a titanium barrier layer Semiconductor structure having a titanium barrier layer

1997-08-05

1999-07-20

Booth, Richard A.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438643, 438644, 438653, 438654, 438656, H01L 214763

Patent

active

059267348

ABSTRACT:
A semiconductor structure (10)includes a semiconductor substrate (12), a silicon layer (18)overlying the semiconductor substrate, a dielectric layer (16)overlying the silicon layer and having a contact opening to expose a portion of the silicon layer, and a metal layer stack (20)overlying the dielectric layer and having a portion in contact with the silicon layer through the contact opening. The metal layer stack comprises a barrier layer (24)of titanium with incorporated oxygen (of greater than about 11 atomic percent) to provide diffusion resistance against, for example, platinum, oxygen, and silicon.

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Research Disclosure Abstract from Derwent WPI database (RD 296091).

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