Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1997-05-30
2000-01-11
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257417, H01L 2982
Patent
active
060139331
ABSTRACT:
A process for forming a sensor (10) such as an accelerometer includes the steps of forming an epitaxial layer (14) on a semiconductor substrate (12), patterning a portion of the epitaxial layer to provide a monocrystalline finger (20,22), wherein the finger has a height (43) at least twice its width (44), and forming a cavity (40) under at least a portion of the finger to expose a bottom surface (38) of the finger using an etchant with an etch selectivity for the semiconductor substrate relative to the epitaxial layer of greater than about 10:1. The distance (42) from the bottom of the cavity to the bottom surface of the member is greater than about 5 microns. The accelerometer is useful for lateral acceleration sensing and is built in bulk silicon at the surface of the substrate.
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The 7th International Conference on Solid-State Sensors and Actuators; Jun. 1993, Yokohama, Japan; Digest of Technical Papers, "Application of Porour Silicon as a Sacrifical Layer", W.Lan P. Steiner, A. Richter, K. Marusczyk, G. Weimann and H. Sandmaier; pp. 202-203.
EDP; Semiconductor Sensors; John Wiley & Sons, Inc. "The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions", A. Reisman,M. Berkenblit, S.A., Chan, F.B. Kaufman and D.C.Green, pp. 46-47.
Sensor Technology and Devices; 1994 Artech House, Inc.; "Bulk Micromachining Technology", Lj. Ristic, H. Hughes, F. Shemansky, pp. 49-66 .
Foerstner Juergen August
Hughes Henry Guenther
Mirza Amir Raza
Collopy Daniel R.
Dover Rennie W.
Meier Stephen D.
Motorola Inc.
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