Semiconductor structure for long term learning

Details Semiconductor structure for long term learning Semiconductor structure for long term learning

1995-03-07

1997-05-06

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257321, 257345, 36518503, 36518528, H01L 29788

Patent

active

056273924

ABSTRACT:
A silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.

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