Semiconductor structure for fabrication of a thermal sensor

Details Semiconductor structure for fabrication of a thermal sensor Semiconductor structure for fabrication of a thermal sensor

1995-06-05

1997-08-05

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257431, H01L 31058

Patent

active

056545800

ABSTRACT:
An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).

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