Method of making high speed EPROM containing graded source/drain

Details Method of making high speed EPROM containing graded source/drain Method of making high speed EPROM containing graded source/drain

1992-03-05

1995-10-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 43, H01L 21336, H01L 218247

Patent

active

054551846

ABSTRACT:
An EPROM memory cell (32) stores information in a floating gate (44) which overlies a portion of a channel between a program drain (36) and a read drain (34). A control gate (46) has a lower segment (48) which overlies the portion of the channel not covered by the floating gate (44), and has an upper portion (50) overlying the floating gate (44). During a program operation, electrons flow from the read drain (34), acting as a source, to the program drain (36), and hot electrons are stored within the floating gate (44). During a read operation, electrons flow from the programming gate (36) to the read gate (34), and the majority of hot electrons drift to the control gate (46). Since the hot electrons do not enter the floating gate (44) during read operations, a higher driving current can be used, thereby increasing the speed at which the EPROM memory cell (32) is read.

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