Semiconductor structure for an MOS transistor and method for fab

Details Semiconductor structure for an MOS transistor and method for fab Semiconductor structure for an MOS transistor and method for fab

1997-06-03

1998-10-06

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

H01L 213205, H01L 214763

Patent

active

058175709

ABSTRACT:
The MOS transistor has field plates and a subarea of the gate formed from the same polysilicon layer. A gate oxide lying underneath them is produced at the beginning of the fabrication process and it therefore exhibits particularly high quality. The polysilicon in the active area is raised to the same level as the adjoining field oxide areas, resulting in a planar topology.

REFERENCES:
patent: 4574468 (1986-03-01), Slotboom et al.
patent: 5376678 (1994-12-01), Hsu et al.
"Improved Narrow Trench Profile Using A Composite Spacer Process" (Garling et al.), Motorolla, Aug. 1996, p. 143.

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