Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-19
1997-07-29
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257378, 257509, H01L 2976, H01L 2994, H01L 2900
Patent
active
056524560
ABSTRACT:
A BiCMOS process is provided for fabricating on the same semiconductor substrate three types of N-wells optimized respectively for (i) PMOS FETs requiring low P+/N-well capacitance; (ii) NPN bipolar transistors which do not require low collector-to-substrate capacitance and PMOS FETs which require latch-up immunity; and (iii) NPN bipolar transistors which require low collector-to-substrate capacitance.
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Fahmy Wael
Integrated Device Technology Inc.
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