Semiconductor structure comprising an electrostatic...

Details Semiconductor structure comprising an electrostatic... Semiconductor structure comprising an electrostatic...

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S362000, C257S593000

Reexamination Certificate

active

06949799

ABSTRACT:
A semiconductor structure including a substrate, a device layer and a contact arranged on the substrate, comprises an ESD protective means, arranged between the substrate and the contact, such, that in the ESD case a breakthrough from the ESD protective means to the contact occurs.

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Taur, Yuan, et al., “Fundamentals of Moden VLSI Devices”, Cambridge University Press, 1998, pp. 320-325, (6 pages).
Betrand G. et al., “Analysis and Compact Modeling of a Vertical Grounded-Base NPN Bipolar Transistor used as an ESD Protection in a Smart Power Technology”, IEEE BCTM 1,2, 2000, pp. 28-31, (4 pages).
Amerasekera A. et al., “ESD in Silicon Integrated Circuits”, John Wiley & Sons, 1995, pp. 186-188, (3 pages).

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