Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-27
2009-11-24
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S675000, C438S643000
Reexamination Certificate
active
07622381
ABSTRACT:
The present invention provides a semiconductor structure and the forming method thereof. The structure includes a substrate having a plurality of stacks; a conformal layer on the substrate and a portion of sidewalls of the plurality of the stacks; and a plurality of plugs between the plurality of stacks. In addition, the present invention also provides a method of forming the semiconductor structure, comprising steps of providing a substrate; forming a plurality of stacks on the substrate; forming a conformal layer on the stacks and on the substrate; removing a portion of the conformal layer to expose a sidewall and a top surface of the plurality of stacks; and forming a plurality of plugs between the stacks.
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Ho Jar-Ming
Huang Ming-Yuan
Lin Shian-Jyh
Ingrassia Fisher & Lorenz P.C.
Luu Chuong A.
Nanya Technology Corp.
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