Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Reexamination Certificate
2008-12-09
2011-11-22
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With physical configuration of semiconductor surface to...
C257S487000, C257S499000, C257S506000, C257SE21545
Reexamination Certificate
active
08063467
ABSTRACT:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a first protrusion and a cavity having a boundary that is below a surface of the semiconductor material, wherein the first protrusion extends from the boundary of the cavity. The method further includes forming a non-conformal material over a first portion of the first protrusion using an angled deposition of the non-conformal material, wherein the angle of deposition of the non-conformal material is non-perpendicular to the surface of the semiconductor material. Other embodiments are described and claimed.
REFERENCES:
patent: 6274920 (2001-08-01), Park et al.
Cool Kenneth J.
Cool Patent P.C.
HVVi Semiconductors, Inc.
Pert Evan
Wilson Scott R
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