Semiconductor structure and method of making same

Details Semiconductor structure and method of making same Semiconductor structure and method of making same

2006-01-24

2006-01-24

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S455000, C438S456000

Reexamination Certificate

active

06989314

ABSTRACT:
A semiconductor structure includes a substrate having a surface and being made of a material that provides a typical surface properties to the surface, a bonding layer on the surface of the substrate, and a further layer molecularly bonded to the bonding layer. A method for fabricating such a semiconductor structure includes providing a substrate having a surface and being made of a material that provides a typical surface properties to the surface, providing a bonding layer on the surface of the substrate, smoothing the bonding layer to provide a surface that is capable of molecular bonding, and molecularly bonding a further layer to the bonding layer to form the structure. The a typical surface properties preferably include at least one of a roughness of more than 0.5 nm rms, or a roughness of at least 0.4 nm rms that is difficult to polish, or a chemical composition that is incompatible with molecular bonding.

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