Semiconductor structure and method for manufacturing the same

Details Semiconductor structure and method for manufacturing the same Semiconductor structure and method for manufacturing the same

2010-05-17

2010-11-02

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S155000, C257SE21320, C257SE21561

Reexamination Certificate

active

07824970

ABSTRACT:
A semiconductor structure and a method for manufacturing the same are provided. Compared to conventional structures of thin film transistors, the structure of the present invention uses a patterned first metal layer as a data line, and a patterned second metal layer as a gate line. In a thin film transistor, a gate is also located in the patterned first metal layer, and is electrically connected to the gate line located in the patterned second metal layer through a contact hole. A source and a drain of the thin film transistor are electrically connected to the data line through a contact hole. The structure of the present invention increases a storage capacitance and an aperture ratio.

REFERENCES:
patent: 6949417 (2005-09-01), Ahn
patent: 2008/0017859 (2008-01-01), Tai et al.

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