Semiconductor structure and method for making the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S674000, C438S685000, C257SE21168, C257SE21171

Reexamination Certificate

active

08003528

ABSTRACT:
A method for forming a semiconductor structure is provided. The method includes providing a substrate; forming a dielectric layer on the substrate; forming a conductor pattern on a main surface of the dielectric layer, the conductor pattern having a top surface and sidewalls; and performing a selective atomic layer deposition (ALD) process to selectively deposit a conformal metal layer onto the top surface and sidewalls of the conductor pattern, but without depositing onto the main surface of the dielectric layer substantially.

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