Semiconductor structure and method

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156 8, 156 17, 357 50, 357 52, 357 56, 357 60, H01L 21308, H01L 2704, H01L 2904

Patent

active

039862003

ABSTRACT:
Semiconductor structure formed from a semiconductor body having an impurity of one conductivity type therein and having a major surface lying in a <100> plane. Moats are provided which extend through the major surface and have spaced side walls lying in a plane different from the <100> plane and at said surface define spaced islands. Layers of protective material are formed on the side walls of the moats. Regions of said impurity of one conductivity type and of greater concentration than that in the body extend downwardly into the body from the protective layers. An insulating material fills the moats and devices are formed in the islands. An insulating layer is formed on said surface and lead means is provided on the insulating layer and extends through the insulating layer to make contact to the devices and extends over the material in said moats to interconnect the devices in the spaced islands. It is desirable that the moats have a generally rectangular configuration with inner and outer perimeters and inner and outer corners. The outer corners are defined by diagonal, generally planar wall portions which lie in either the <110> plane or the <111> plane. If desired, the bottom of the moats can extend downwardly until the side walls form a Vee in cross-section.

REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3728179 (1973-04-01), Davidson et al.
patent: 3766438 (1973-10-01), Castrucci et al.
patent: 3878552 (1975-04-01), Rogers
Doo et al., "Monolithic Semiconductor Structures . . . ," IBM Technical Disclosure Bulletin, vol. 8, No. 4, Sept. 1965, pp. 659-660.
"Electronics Review," Electronics, July 3, 1972, pp. 39 and 41.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor structure and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-947295

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.