Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-30
2007-10-30
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S338000, C257S341000, C257S350000, C257S351000, C257S357000, C257S369000, C257S401000
Reexamination Certificate
active
11399827
ABSTRACT:
A semiconductor structure is disclosed, including a substrate having therein a first well of a first conductivity type and a second well of a second conductivity type, a first MOS transistor of the first conductivity type and a second MOS transistor of the second conductivity type. The first MOS transistor is disposed on the second well, including a gate structure on the second well and a strained layer of the first conductivity type in an opening in the second well beside the gate structure. The difference between the lattice parameter of a portion of the strained layer near the bottom of the opening and that of the substrate is less than the difference between the lattice parameter of a portion of the strained layer apart from the bottom of the opening and that of the substrate. The second MOS transistor is disposed on the first well.
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Cheng Tzyy-Ming
Huang Cheng-Tung
Hung Wen-Han
Jeng Li-Shian
Lee Kun-Hsien
J.C. Patents
Soward Ida M.
United Microelectronics Corp.
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