Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-13
2008-11-18
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S344000, C257S369000, C257S382000, C257S384000, C257SE21634, C257SE27064
Reexamination Certificate
active
07453120
ABSTRACT:
A method for fabricating a semiconductor structure is described. A substrate is provided, having thereon a gate structure and a spacer on the sidewall of the gate structure and having therein an S/D extension region beside the gate structure. An opening is formed in the substrate beside the spacer, and then an S/D region is formed in or on the substrate at the bottom of the opening. A metal silicide layer is formed on the S/D region and the gate structure, and then a stress layer is formed over the substrate.
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Cheng Tzyy-Ming
Huang Cheng-Tung
Hung Wen-Han
Jeng Li-Shian
Ting Shyh-Fann
J.C. Patents
Unitd Microelectronics Corp.
Wilczewski M.
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