Semiconductor structure

Details Semiconductor structure Semiconductor structure

2007-11-27

2010-02-02

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S408000, C257S409000, C257SE29255, C257SE29258

Reexamination Certificate

active

07655978

ABSTRACT:
A semiconductor structure including a substrate, a first well, a second well, a third well, a first doped region, and a second doped region. The substrate includes a first conductive type. The first well includes a second conductive type and is formed in the substrate. The second well includes the second conductive type and is formed in the first well. The third well includes the first conductive type, is formed in the substrate, and neighbors the first well. The first doped region includes the first conductive type and is formed in the first well. The second doped region includes the first conductive type and is formed in the first well. The first well surrounds all surfaces of the first and the second doped regions.

REFERENCES:
patent: 7595558 (2009-09-01), Shin

Affiliated with

Also associated with

Rating

Semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4212429