Semiconductor strain sensor

Details Semiconductor strain sensor Semiconductor strain sensor

1997-01-24

1999-02-09

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257254, 257415, 257417, 257418, 438 50, 438 53, H01L 2982, H01L 2720, H01L 2984

Patent

active

058698760

ABSTRACT:
A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.

REFERENCES:
patent: 4706374 (1987-11-01), Murakami
patent: 5283459 (1994-02-01), Hirano et al.
patent: 5296730 (1994-03-01), Takano et al.
patent: 5397911 (1995-03-01), Hiyama et al.
patent: 5514898 (1996-05-01), Hartauer
patent: 5549785 (1996-08-01), Sakai et al.
patent: 5614753 (1997-03-01), Uchikoshi et al.

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