Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2009-11-12
2011-11-22
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257SE29324
Reexamination Certificate
active
08063457
ABSTRACT:
A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region.
REFERENCES:
patent: 5231301 (1993-07-01), Peterson et al.
Hakomori Ikuo
Ida Koichi
Nakamura Yuji
Nakanishi Keiichi
Jordan and Hamburg LLP
Patton Paul
Smith Zandra
Tanita Corporation
Toko Inc.
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