Semiconductor storage element and manufacturing method thereof

Details Semiconductor storage element and manufacturing method thereof Semiconductor storage element and manufacturing method thereof

2011-06-07

2011-06-07

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

07956405

ABSTRACT:
A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.

REFERENCES:
patent: 2005/0136586 (2005-06-01), Ono
patent: 2007/0215958 (2007-09-01), Tanaka et al.
patent: 2007/0287254 (2007-12-01), Natori et al.
patent: 2008/0237688 (2008-10-01), Yasuda
patent: 2009/0212346 (2009-08-01), Ino et al.
patent: 2004-71877 (2004-03-01), None

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