Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S297000, C257S488000, C257S491000, C257S666000
Reexamination Certificate
active
06872999
ABSTRACT:
Memory cells, word lines and bit lines are formed on the substrate. Each word line is connected to some memory cells. The bit line is disposed in a wiring layer above the word lines, the bit line being connected to some memory cells and applied with a signal read from the memory cell selected by the word lines. Signal wiring lines are disposed in a wiring layer above the bit lines and partially superposed upon the bit lines. A shield layer is disposed in a wiring layer between the bit lines and signal wiring lines. As viewed along a direction vertical to the surface of the semiconductor substrate, the shield layer includes the bit lines in an area including an area where the bit lines and signal wiring lines are superposed upon each other, openings being formed through the shield layer in areas where the bit lines are not disposed.
REFERENCES:
patent: 5808334 (1998-09-01), Taguchi
patent: 9-74172 (1997-03-01), None
Fujitsu Limited
Nelms David
Tran Mai-Huong
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Semiconductor storage device with signal wiring lines RMED... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device with signal wiring lines RMED..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device with signal wiring lines RMED... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3384757