Semiconductor storage device with a ferroelectric transistor sto

Details Semiconductor storage device with a ferroelectric transistor sto Semiconductor storage device with a ferroelectric transistor sto

1994-04-28

1995-05-02

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, G11C 1122

Patent

active

054125960

ABSTRACT:
A semiconductor storage device having a memory array composed of storage ceils arranged in a matrix. The storage cells include a ferroelectric transistor having a metal-ferroelectrics-semiconductor structure and a switching transistor. A source electrode of one of the transistors and a drain electrode of the other transistors are connected to each other. According to the present invention, the necessary time for writing becomes short, realizing a rapid operation of nano second order. Further, many times (10.sup.10 order) of rewriting is possible. This brings a longer life thereof compared with a EEPROM which is rewritable about 10.sup.4 times. Since the reading out is non-destructive, the rewriting is not required so that the life of the device is further lengthened.

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patent: 5197027 (1993-03-01), Challa
patent: 5198994 (1993-03-01), Natori
patent: 5218568 (1993-06-01), Lin et al.

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