Semiconductor storage device which includes a hydrogen...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000, C257S297000, C257S303000, C257S310000

Reexamination Certificate

active

10920344

ABSTRACT:
The upper electrode of a capacitor is constituted of laminated films which act to prevent hydrogen atoms from reaching the capacitor electrodes and degrading performance. In one example, a four layer upper electrode respectively acts as a Schottky barrier layer, a hydrogen diffusion preventing layer, a reaction preventing layer, and an adsorption inhibiting layer. Therefore, the occurrence of a capacitance drop, imperfect insulation, and electrode peeling in the semiconductor device due to a reducing atmosphere can be prevented. In addition, the long-term reliability of the device can be improved.

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patent: 11-224934 (1999-08-01), None
patent: PCT/JP98/00027 (1998-01-01), None

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