Semiconductor storage device requiring short time for program vo

Details Semiconductor storage device requiring short time for program vo Semiconductor storage device requiring short time for program vo

1995-06-01

1997-05-20

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365226, 327143, 327538, G11C 700

Patent

active

056318677

ABSTRACT:
An external power source voltage Vcc rises until it exceeds the threshold voltage Vth of an NMOS transistor diode-connected between the external power source (voltage Vcc) and an internal boosted power source (voltage Vpp), whereupon the NMOS transistor is turned on, supplying the internal boosted power source with a voltage (Vcc-Vth) until the power source voltage Vcc reaches its final value. And when the internal reset signal ZPOR expires, the internal boosted power source generating circuit is started to operate so that the internal boost source voltage Vpp is boosted to an intended level Vpp. As a result, when the power is turned on, early stabilization of the boosted power source voltage is realized in a semiconductor storage device.

REFERENCES:
patent: 5010259 (1991-04-01), Inoue
patent: 5038325 (1991-08-01), Douglas et al.
patent: 5184035 (1993-02-01), Sugibayashi
patent: 5367489 (1994-11-01), Park
patent: 5446697 (1995-08-01), Yoo

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