Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-01-23
2007-01-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230060, C365S185230
Reexamination Certificate
active
10848481
ABSTRACT:
A semiconductor storage device includes a plurality of memory elements and a redundancy circuit. Each of the memory elements includes a gate electrode provided on a semiconductor layer, a gate insulating film intervening between the gate electrode and the semiconductor layer, a channel region provided under the gate electrode, diffusion regions respectively provided at both sides of the channel region, the diffusion regions having a conductivity type which is opposite a conductivity type of the channel region, and memory functioning members respectively provided at both sides of the gate electrode, the memory functioning members having a function of holding charge. The redundancy circuit addresses a single chip memory including cells associated with a plurality of redundant lines and includes a decoder for selecting a redundant row. The semiconductor storage device can permanently inactivate further programming of the redundancy circuit in order to prevent a user from performing inadvertent programming.
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Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Yaoi Yoshifumi
Birch & Stewart Kolasch & Birch, LLP
Phung Anh
Sharp Kabushiki Kaisha
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