Semiconductor storage device performing self-refresh operation i

Static information storage and retrieval – Read/write circuit – Data refresh

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36518525, 36518527, 365203, G11C 700

Patent

active

060757396

ABSTRACT:
A semiconductor storage device has a leak-monitoring capacitor connected to a bit line pre-charge potential generator, and a pre-charging transistor for charging one end of the leak-monitoring capacitor with a first potential (Vcc). The bit line pre-charge potential generator discharges from the leak-monitoring capacitor an amount of electric charges corresponding to a leak generated at a bit line pre-charge potential line which is connected with bit lines. A refresh timer circuit generates a clock signal in a cycle corresponding to a time in which the potential of the one end of the leak-monitoring capacitor decreases from the first potential (Vcc) to a second potential.

REFERENCES:
patent: 5757715 (1998-05-01), Williams et al.
patent: 5818268 (1998-10-01), Kim et al.
patent: 5867438 (1999-02-01), Nomura et al.
patent: 5898343 (1999-04-01), Morgan

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