Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-09-28
2008-10-14
Yoha, Connie C. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000, C365S185230, C365S185250
Reexamination Certificate
active
07436691
ABSTRACT:
A semiconductor storage device includes a bit line; a word line; a plate line; a ferroelectric capacitor having a ferroelectric substance between electrodes, one of the electrodes being connected to the plate line, the ferroelectric capacitor being capable of storing data; a selection transistor connected between the other of the electrodes of the ferroelectric capacitor and the bit line, the selection transistor being capable of selectively connecting the ferroelectric capacitor to the bit line on the basis of a potential on the word line; a bit line driver corresponding to the bit line to drive the bit line; a word line driver corresponding to the word line to drive the word line; and a plate line driver corresponding to the plate line, the plate line driver including a plurality of plate voltage lines so as to be able to apply a plurality of different voltage values to the plate line, the plate line driver connecting a common single plate voltage line included in the plate voltage lines to the plate line when data is written or rewritten into the ferroelectric capacitor.
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Shuto Susumu
Yamada Yuki
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Yoha Connie C.
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