Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-01
2008-01-01
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S402000, C257S348000, C257S392000, C257SE29309
Reexamination Certificate
active
07315060
ABSTRACT:
A semiconductor storage device has a single gate electrode formed on a semiconductor substrate through a gate insulation film. First and second memory function bodies formed on both sides of the gate electrode. A P-type channel region is formed in a surface of the substrate on the side of the gate electrode. N-type first and second diffusion regions are formed on both sides of the channel region. The channel region is composed of an offset region located under the first and second memory function bodies and a gate electrode beneath region located under the gate electrode. The concentration of a dopant which imparts a P-type conductivity to the offset region is effectively lower than the concentration of a dopant which imparts the P-type conductivity to the gate electrode beneath region. This makes it possible to provide the semiconductor storage device which is easily shrunk in scale.
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Iwata Hiroshi
Kataoka Kotaro
Nakano Masayuki
Shibata Akihide
Birch & Stewart Kolasch & Birch, LLP
Ho Tu-Tu
Sharp Kabushiki Kaisha
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