Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-07-18
2006-07-18
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S225700, C365S063000, C365S189040, C365S201000, C365S230060
Reexamination Certificate
active
07079432
ABSTRACT:
A semiconductor storage device has a function of simultaneously activating a plurality of word lines connected to the same bit line via cell transistors. The semiconductor storage device comprises a column redundancy system that sets repair regions of column redundancy based on row addresses. By the column redundancy system, the repair regions are set to cause the plurality of word lines which can be activated together to belong to the same repair region, when the repair regions are set to divide the bit line.
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Ishizuka Kenji
Kato Daisuke
Taira Takashi
Watanabe Yohji
Yoshida Munehiro
Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
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