Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-04-05
2005-04-05
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230060, C365S230030, C365S189050, C365S205000, C365S233100
Reexamination Certificate
active
06876588
ABSTRACT:
There is provided a semiconductor storage device in which only a defective element is replaced by a row redundant element to compensate for a defect if at least one of a plurality of elements is defective in a case where the plurality of elements in a memory cell array are simultaneously activated. The semiconductor storage device includes an array control circuit which is configured to interrupt the operation of the defective element by preventing a word line state signal from being received based on a signal to determine whether a row redundancy replacement process is performed or not. The word line state signal is input to the plurality of memory blocks in the cell array unit via a single signal line.
REFERENCES:
patent: 5546349 (1996-08-01), Watanabe et al.
patent: 5615164 (1997-03-01), Kirihata et al.
patent: 5841710 (1998-11-01), Larsen
patent: 6385071 (2002-05-01), Chai et al.
patent: 6396748 (2002-05-01), Fujita
patent: 6741509 (2004-05-01), Kato et al.
Yohji Watanabe et al., “A 286 mm2256Mb DRAM with x32 Both-Ends DQ”, IEEE Journal of Solid-State Circuits, vol. 31, No. 4, Apr. 1996, pp 567-574.
Ishizuka Kenji
Kato Daisuke
Taira Takashi
Watanabe Yohji
Yoshida Munehiro
Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
Nguyen Viet Q.
LandOfFree
Semiconductor storage device formed to optimize test... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device formed to optimize test..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device formed to optimize test... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3376406