Semiconductor storage device capable of reduced current consumpt

Details Semiconductor storage device capable of reduced current consumpt Semiconductor storage device capable of reduced current consumpt

1992-11-12

1994-08-09

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

365207, 365203, 365208, G11C 1124

Patent

active

053372719

ABSTRACT:
A semiconductor storage device is provided which minimizes current consumption by using a circuit which is fed by charges stored in a parasitic capacitance of another circuit. To this end, short-circuiting switches SP and SN are provided respectively between first common source lines PP1 and PN1 and second common source lines PP2 and PN2 of the semiconductor device. Electric charges on the first common source lines which have been amplified to its normal amplitude change the voltage level of the second common source lines. A data line connected to the second common source line is amplified to half of the normal amplitude. Thereafter, the signal on the data line is amplified by a sense amplifier. As a result, the charge and discharge currents on the data line are substantially halved compared to the conventional device.

REFERENCES:
patent: 4780852 (1988-10-01), Kajigaya et al.
Hidaka et al., "A High-Density Dual-Port Memory Cell Operation for VLSI Drams", 1991 Symposium on VLSI Circuits, pp. 65-66.

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