Semiconductor storage device and method for manufacturing the sa

Details Semiconductor storage device and method for manufacturing the sa Semiconductor storage device and method for manufacturing the sa

1997-12-29

2000-07-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257324, H01L 2976

Patent

active

060842601

ABSTRACT:
An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an insulating film. A laminated structure formed of the Si oxide film, the oriented paraelectric oxide thin film and the oriented ferroelectric thin film is used as a gate of a transistor. The Si oxide film functions as a carrier injection inhibiting layer.

REFERENCES:
patent: 4888733 (1989-12-01), Mobley
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5955755 (1999-09-01), Hirai et al.

Affiliated with

Also associated with

Rating

Semiconductor storage device and method for manufacturing the sa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor storage device and method for manufacturing the sa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device and method for manufacturing the sa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1488784