Semiconductor storage device and method for manufacturing the sa

Details Semiconductor storage device and method for manufacturing the sa Semiconductor storage device and method for manufacturing the sa

1996-03-25

1999-09-21

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257406, 257324, 438287, H01L 2976

Patent

active

059557559

ABSTRACT:
An Si oxide film, an oriented paraelectric oxide thin film and an oriented ferroelectric thin film are laminated on an Si single crystal substrate having a region for a source and a drain. A conductor thin film is formed in a portion not covered with an insulating film. A laminated structure formed of the Si oxide film, the oriented paraelectric oxide thin film and the oriented ferroelectric thin film is used as a gate of a transistor. The Si oxide film functions as a carrier injection inhibiting layer.

REFERENCES:
patent: 4888733 (1989-12-01), Mobley
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5572052 (1996-11-01), Kashihara et al.

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