Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-05-24
2005-05-24
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S203000
Reexamination Certificate
active
06898108
ABSTRACT:
In a memory block, for example, included in a semiconductor storage device, memory cells, reset transistors, and gain transistors are provided. The memory block further includes charge transistors for charging the gate potentials of the gain transistors, and current shutoff transistors for disconnecting electrical connection between the gain transistors and bit lines.
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Kato Yoshihisa
Yamada Takayoshi
Matsushita Electric - Industrial Co., Ltd.
Nguyen Tan T.
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