Semiconductor storage device and manufacturing method thereof

Details Semiconductor storage device and manufacturing method thereof Semiconductor storage device and manufacturing method thereof

2011-04-19

2011-04-19

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE27102

Reexamination Certificate

active

07928516

ABSTRACT:
A semiconductor storage device include a semiconductor substrate, an insulating layer provided on the semiconductor substrate and having an opening, a semiconductor layer provided on the insulating layer, the semiconductor layer having a recess at a center of a surface thereof above the opening, a memory cell unit provided on the semiconductor layer and including a plurality of memory cells, current paths of the memory cells being connected in series, a selecting transistor adjacent to the memory cell unit and arranged on a region of the semiconductor layer including the recess, the selecting transistor including a gate insulating film provided on the region of the semiconductor layer including the recess and a gate electrode provided on the gate insulating film.

REFERENCES:
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patent: 7795643 (2010-09-01), Sel et al.
patent: 2006/0023558 (2006-02-01), Cho et al.
patent: 2006/0035437 (2006-02-01), Mitsuhira et al.
patent: 2007/0102749 (2007-05-01), Shirota et al.
patent: 4-79370 (1992-03-01), None
patent: 2007-110029 (2007-04-01), None

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