Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257SE29309
Reexamination Certificate
active
07129539
ABSTRACT:
A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
REFERENCES:
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 6335554 (2002-01-01), Yoshikawa
patent: 5-81072 (1993-11-01), None
patent: 09-116119 (1997-05-01), None
patent: 2000-077618 (2000-03-01), None
patent: 2001-156188 (2001-06-01), None
patent: 2001-230332 (2001-08-01), None
patent: 2002-190535 (2002-07-01), None
“A handbook for flash memory techniques,” Edited by Fujio Masuoka K.K Science Forum, Aug. 15, 1993, pp. 55-58.
Adachi Kouichirou
Iwata Hiroshi
Ogura Takayuki
Shibata Akihide
Birch & Stewart Kolasch & Birch, LLP
Ho Tu-Tu
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor storage device and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device and manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3696969