Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-22
2011-02-22
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S208000, C257S273000, C257S560000
Reexamination Certificate
active
07893478
ABSTRACT:
This disclosure concerns a semiconductor storage device comprising a semiconductor layer provided on the insulation layer provided on the semiconductor substrate; a source layer and a drain layer provided in the semiconductor layer; a body provided between the source layer and the drain layer, the body being in an electrically floating state; an emitter layer contacting with the source layer, the emitter layer having an opposite conductive type to the source layer; a word line including the source layer, the drain layer, and the body, the word line being provided to memory cells arrayed in a first direction in a plurality of tow-dimensionally arranged memory cells; a source line connected to the source layers of the memory cells arrayed in the first direction; and a bit line connected to the drain layers of the memory cells arrayed in a second direction intersecting the first direction.
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patent: 2005/0001232 (2005-01-01), Bhattacharyya
patent: 2006/0181919 (2006-08-01), Forbes
Fukuda Ryo
Higashi Tomoki
Ohsawa Takashi
Kabushiki Kaisha Toshiba
Kusumakar Karen M
Nguyen Ha Tran T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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