Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-02-09
2008-09-30
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S185090, C365S230030
Reexamination Certificate
active
07430144
ABSTRACT:
A semiconductor storage device according to the present invention comprises one or more memory planes8comprising a plurality of memory blocks9, and a block selection circuit for decoding an block address signal for selecting the memory block9from the memory plane8to select the memory block, generates a dummy block address for selecting a dummy block that is different from the selected block address and a defective block address of a defective block by a predetermined logical operation targeted for a specific partial bit in address bits of the selected block address when the defective block is contained in the memory plane. A bit line connected to the selected memory cell selected by the selected block address and a bit line in the dummy block are connected to differential input terminals of a sense amplifier circuit9.
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International Search Report mailed on Jun. 14, 2005 for PCT Application No. PCT/JP2005/001890 filed on Feb. 9, 2005, five pages.
Mori Yasumichi
Watanabe Masahiko
Nguyen Tan T.
Sharp Kabushiki Kaisha
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