Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2007-10-30

2007-10-30

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S104000, C365S185080

Reexamination Certificate

active

11372495

ABSTRACT:
A semiconductor storage device floats the gate of a conventional transistor between two capacitors to store a logic state which can be utilized to store the condition of a circuit such as a latching type circuit such as a flip-flop or register prior to a power down operation to save power. The gate and first terminals of the two capacitors preferably share the same conductive line such as a polysilicon segment. A second transistor and a second set of capacitors store the complementary state of the logic state so that complementary signals are provided for detecting the stored logic state. After the time for power down has ended, the state of the semiconductor storage device made up of the two transistors and four capacitors is sensed, and the detected logic state is loaded back into the latching type circuit.

REFERENCES:
patent: 5892709 (1999-04-01), Parris et al.
patent: 6414872 (2002-07-01), Bergemont et al.
patent: 6836425 (2004-12-01), Kang et al.
patent: 2004/0021166 (2004-02-01), Hyde et al.
patent: 2004/0129985 (2004-07-01), Lee et al.
Lee, Kung-Hong; “New Single-poly EEPROM with Cell size down to 8F2for Gigh Density Embedded Nonvolatile Memory Applications”; 2003; pp. 93-94; 2003 Symposium of VLSI Technology digest of Technical Papers; USA.
U.S. Appl. No. 11/068,625, filed Feb. 28, 2005.

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