Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-04-10
2007-04-10
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189040, C365S229000
Reexamination Certificate
active
11090151
ABSTRACT:
Disclosed is a semiconductor storage device in which control is performed in such a manner that if the refresh operation is not being performed when a chip-select signal undergoes a transition from an inactive (standby) state to an active state, read or write access is executed immediately and if the refresh operation is in progress when the chip-select signal undergoes a transition from the inactive state to the active state, a wait signal for causing read or write access to wait is generated by a wait generating circuit.
REFERENCES:
patent: 2003/0198098 (2003-10-01), Fujioka et al.
NEC Electronics Product Information “Mobile Specified RAM”.
Micron 4Meg×16 ASYNC/PAGE/BURST CellularRam Memory, pp. 5 and 10.
Hirota Takuya
Shimoyama Takato
Takahashi Hiroyuki
Le Thong Q.
NEC Electronics Corporation
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