Semiconductor storage device

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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C365S189040, C365S229000

Reexamination Certificate

active

11090151

ABSTRACT:
Disclosed is a semiconductor storage device in which control is performed in such a manner that if the refresh operation is not being performed when a chip-select signal undergoes a transition from an inactive (standby) state to an active state, read or write access is executed immediately and if the refresh operation is in progress when the chip-select signal undergoes a transition from the inactive state to the active state, a wait signal for causing read or write access to wait is generated by a wait generating circuit.

REFERENCES:
patent: 2003/0198098 (2003-10-01), Fujioka et al.
NEC Electronics Product Information “Mobile Specified RAM”.
Micron 4Meg×16 ASYNC/PAGE/BURST CellularRam Memory, pp. 5 and 10.

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