Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2006-01-31

2006-01-31

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

30

Reexamination Certificate

active

06992347

ABSTRACT:
The semiconductor storage device comprises memory cell transistors formed on a semiconductor substrate10; first insulation films42covering the top surfaces and the side surfaces of gate electrodes20of the memory cell transistors; through-holes40opened on first diffused layers24; a second insulation film36with through-holes40opened on first diffused layers24and through-holes38opened on second diffused layers26formed in; capacitors formed on the inside walls and the bottoms of the through-holes40and including capacitor storage electrodes46, connected to the first diffused layers24; capacitor dielectric films48covering the capacitor storage electrodes46, and capacitor-opposed electrodes54covering at least a part of the capacitor dielectric films48; and, contact conducting films44formed on the inside walls and bottoms of the through-holes38, and connected to the second diffused layers. This structure of the semiconductor storage device makes it unnecessary to secure an alignment allowance for alignment of the through-holes40opened on the first diffused layer24and the through-holes38opened on the second diffused layer26with the gate electrode20, which permits the semiconductor storage device to have a small memory cell area.

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