Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2005-08-23

2005-08-23

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000

Reexamination Certificate

active

06933578

ABSTRACT:
A configuration is provided to reduce the difference in characteristics caused between transistors even in the case where the shapes of gate electrodes vary. To do this, a dummy gate contact region disposed on an isolation region between an n-channel type transistor and a p-channel type transistor is provided in a gate electrode in a manner of corresponding to a gate contact region of another gate electrode.

REFERENCES:
patent: 6037638 (2000-03-01), Abe et al.
patent: 6664603 (2003-12-01), Karasawa et al.
patent: 2003/0132490 (2003-07-01), Komori
patent: 10-247691 (1998-09-01), None

Affiliated with

Also associated with

Rating

Semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3488325