Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-01-08
2008-01-08
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230030, C365S207000
Reexamination Certificate
active
07317649
ABSTRACT:
A semiconductor storage device comprising: unit blocks each including memory cells, first row of sense amplifiers on one side of bit lines; second row of sense amplifiers on an other side of the bit lines; first switch means which switches a connection state between the one side of the bit lines and the first row of sense amplifiers; second switch means which switches a connection state between the other side of the bit lines and the second row of sense amplifiers; third switch means arranged in the approximate center of the bit lines in an extending direction thereof to switch a connection state of the bit lines; and refresh control means which divides the unit block into two areas and controls the refresh operation using the switch means and the row of sense amplifiers according to which area a selected word line to be refreshed is in.
REFERENCES:
patent: 5691933 (1997-11-01), Takenaka
patent: 5812478 (1998-09-01), Okamura
patent: 2003/0112690 (2003-06-01), Tsukada
patent: 2004-103657 (2004-04-01), None
patent: 1999-0057325 (1999-07-01), None
Korean Office Action issued in Korean Patent Application No. KR 10-2006-0029002, dated May 28, 2007.
Elpida Memory Inc.
Le Thong Q.
McDermott Will & Emery LLP
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