Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2011-08-30

2011-08-30

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

08009466

ABSTRACT:
A semiconductor storage device is provided with a memory array including a plurality of memory cells. The plurality of memory cells includes: first and third memory cells arranged along one of an even-numbered row and an odd-numbered row, and a second memory cell arranged along the other. Each of the plurality of memory cells includes: a first transistor comprising first and second diffusion layers; a second transistor comprising third and fourth diffusion layers; and a magnetoresistance element having one of terminals thereof connected to an interconnection layer which provides an electrical connection between the second and third diffusion layers. The fourth diffusion layer of the first memory cell is also used as the first diffusion layer of the second memory cell. In addition, the fourth diffusion layer of the second memory cell is also used as the first diffusion layer of the third memory cell.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6795340 (2004-09-01), Sakimura et al.
patent: 6834005 (2004-12-01), Parkin
patent: 7064974 (2006-06-01), Suzuki et al.
patent: 7184301 (2007-02-01), Sugibayashi et al.
patent: 7254057 (2007-08-01), Hidaka
patent: 2004/0100835 (2004-05-01), Sugibayashi et al.
patent: 2005/0002229 (2005-01-01), Matsutera et al.
patent: 11-195824 (1999-07-01), None
patent: 2000012790 (2000-01-01), None
patent: 2002190579 (2002-07-01), None
patent: 2002197852 (2002-07-01), None
patent: 2003281880 (2003-10-01), None
patent: 2003346474 (2003-12-01), None
patent: 2004348934 (2004-12-01), None
patent: 2005505889 (2005-02-01), None
patent: 2005093488 (2005-04-01), None
patent: 2005191032 (2005-07-01), None
patent: 2006073930 (2006-03-01), None
patent: 2006270069 (2006-10-01), None
International Search Report for PCT/JP2008/052059 mailed May 13, 2008.
K. Yagami et al., “Research Trends in Spin Transfer Magnetization Switching”, Journal of the Magnetics Society of Japan, vol. 28, No. 9, 2004, pp. 937-948.
A. Yamaguchi et al., “Real Space Observation of Current-Driven Wall Motion in Submicron Magnetic Wires”, Physical Reveiw Letters, vol. 92, No. 7, Feb. 20, 2004, pp. 077205-1˜4.

Affiliated with

Also associated with

Rating

Semiconductor storage device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor storage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2765508