Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-07-12
2011-07-12
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S189070, C365S189090
Reexamination Certificate
active
07978499
ABSTRACT:
A semiconductor storage device includes: a memory cell array having memory cells; and a control circuit configured to apply a first voltage to a selected one of first wirings as well as a second voltage to a selected one of second wirings. The control circuit includes: a signal output circuit configured to output a first signal based on a first current flowing through a selected memory cell and a reference current; and a current retaining circuit configured to retain a second current flowing through the first wirings or a wiring electrically connected to the first wirings during a certain period of time. The signal output circuit is configured to determine the first current based on the second current retained by the current retaining circuit. The control circuit is configured to stop application of the first voltage to the first wirings based on the first signal.
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U.S. Appl. No. 12/710,661, filed Feb. 23, 2010, Hosono et al.
Hosono Koji
Takase Satoru
Ho Hoai V
Huang Min
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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