Semiconductor storage device

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S189070, C365S189090

Reexamination Certificate

active

07978499

ABSTRACT:
A semiconductor storage device includes: a memory cell array having memory cells; and a control circuit configured to apply a first voltage to a selected one of first wirings as well as a second voltage to a selected one of second wirings. The control circuit includes: a signal output circuit configured to output a first signal based on a first current flowing through a selected memory cell and a reference current; and a current retaining circuit configured to retain a second current flowing through the first wirings or a wiring electrically connected to the first wirings during a certain period of time. The signal output circuit is configured to determine the first current based on the second current retained by the current retaining circuit. The control circuit is configured to stop application of the first voltage to the first wirings based on the first signal.

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patent: 6961993 (2005-11-01), Oohata
patent: 7057922 (2006-06-01), Fukumoto
patent: 2007/0139992 (2007-06-01), Nitta
patent: 2007/0171762 (2007-07-01), Chen et al.
patent: 2008/0106930 (2008-05-01), Kim et al.
patent: 2008/0170435 (2008-07-01), Tokiwa et al.
patent: 2008/0304308 (2008-12-01), Stipe
patent: 2002-541613 (2002-12-01), None
U.S. Appl. No. 12/710,661, filed Feb. 23, 2010, Hosono et al.

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