Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2011-01-04

2011-01-04

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S051000

Reexamination Certificate

active

07864568

ABSTRACT:
In a semiconductor storage device such as a phase change memory, a technique which can realize high integration is provided. The semiconductor storage device includes a phase change thin film101having two stable phases of a crystal state with low electric resistance and an amorphous state with high electric resistance, upper plug electrodes102and103provided on one side of the phase change thin film101, a lower electrode104provided on the other side of the phase change thin film101, a selecting transistor114whose drain/source terminals are connected to the upper plug electrode102and the lower electrode104, and a selecting transistor115whose drain/source terminals are connected to the upper plug electrode103and the lower electrode104, and a first memory cell is configured with the selecting transistor114and a phase change region111in the phase change thin film101sandwiched between the upper plug electrode102and the lower electrode104, and a second memory cell is configured with the selecting transistor115and a phase change region112in the phase change thin film101sandwiched between the upper plug electrode103and the lower electrode104.

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Ha et al., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption”, Symposium on VLSI Technology Digest of Technical Papers, 2003, pp. 175-176.
Horii et al., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM”, Symposium on VLSI Technology Digest of Technical Papers, 2003, pp. 177-178.

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