Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2011-03-22

2011-03-22

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S326000, C257SE29309, C257SE27081, C257S306000

Reexamination Certificate

active

07910973

ABSTRACT:
A non-volatile semiconductor storage device has: a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series; and a capacitor element area including capacitor elements. Each of the memory strings includes: a plurality of first conductive layers laminated on a substrate; and a plurality of first interlayer insulation layers formed between the plurality of first conductive layers. The capacitor element area includes: a plurality of second conductive layers laminated on a substrate and formed in the same layer as the first conductive layers; and a plurality of second interlayer insulation layers formed between the plurality of second conductive layers and formed in the same layer as the first interlayer insulation layers. A group of the adjacently-laminated second conductive layers is connected to a first potential, while another group thereof is connected to a second potential.

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