Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2011-01-11

2011-01-11

Auduong, Gene N (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189090, C365S230060

Reexamination Certificate

active

07869260

ABSTRACT:
A plurality of memory cells, each including a variable resistance element capable of having four or more values, are arranged at intersections of first wirings and second wirings. A control circuit selectively drives the first and second wirings. A sense amplifier circuit compares, with a reference voltage, a voltage generated by a current flowing through a selected memory cell. A reference voltage generation circuit includes: a resistance circuit including first and second resistive elements connected in parallel. Each of the first resistive elements has a resistance value substantially the same as a maximum resistance value in the variable resistance elements, and each of the second resistive elements has a resistance value substantially the same as a minimum resistance value in the variable resistance elements. A current regulator circuit averages currents flowing through the first and second resistive elements.

REFERENCES:
patent: 6385111 (2002-05-01), Tran et al.
patent: 6504778 (2003-01-01), Uekubo
patent: 6600690 (2003-07-01), Nahas et al.
patent: 6859383 (2005-02-01), Baker
patent: 7262628 (2007-08-01), Southwell et al.
patent: 7345512 (2008-03-01), Tran et al.
patent: 2006-4480 (2006-01-01), None

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